| PART |
Description |
Maker |
| CY7C1383B-117AC CY7C1383B-117BZC CY7C1383B-117BGC |
512 × 36/1M × 18 Flow-Thru SRAM
|
Cypress Semiconductor
|
| CY7C1381D-133AXI CY7C1381D-100AXC CY7C1381D-100BZI |
18 Mbit (512 K ? 36/1 M ? 18) Flow Through SRAM
18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM
|
Cypress Semiconductor
|
| CY7C1355C-133AXC |
9-Mbit (256 K × 36 / 512 K × 18) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| 16297 16297-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, B X-FLOW, .4H LOW FLOW, THREADED
HTSNK B X-FLOW .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
| M-201-T43 M-201-T M-201-T31 M-201-T33 M-201-T41 |
High flow,adjustable flow switch with right-angle flow
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| IDT72V70200 72V70200_DS_72847 IDT72V70200PQF IDT72 |
512 x 512 TSI, 16 I/O at 2Mbps, 3.3V
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| 15985 15985-8 |
HTSNK, B X-FLOW. .911 LOW FLOW. THREADED HTSNK，B型X流0.911低流量。螺
HTSNK B X-FLOW. .911 LOW FLOW. THREADED
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| HM1-6642B_883 HM1-6642_883 HM6-6642_883 HM6-6642B_ |
512 x 8 CMOS PROM 512 X 8 OTPROM, 140 ns, CDIP24
512 x 8 CMOS PROM 512 X 8 OTPROM, 220 ns, CDIP24
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
